Non-contact Resistivity Mapping System
EddyCus® map 8060 RMT
High Resolution Imaging System for SiC Crystal Growth & Wafer Production
- No sample preparation required
- 100% non-destructive — measure production wafers
- High repeatability < 0.1% (1σ)
- Fast data acquisition for high throughput
- Full wafer mapping instead of spot checks
- Process control with spatial uniformity data
导言
The EddyCus® map 8060 RMT automatically measures the sheet resistance and resistivity of large samples up to 800 × 600 mm² (600 × 600 mm² as measurable area) in non-contact mode. After manual placement of the sample, the system performs a fully automated scan and generates a high-resolution sheet resistance map across the entire surface.
The tool uses a moving eddy current sensor, while the sample lays on the table. This design allows for measurements on the fly, with no physical contact required, eliminating errors due to contact resistance. Depending on the selected settings, users can prioritize fast measurement times (under 1 minute) or high spatial resolution (up to 90,000 measurement points per scan).
非接触式测量确保了高精度和可重复性，不受表面状况或接触质量的影响。密集的测量网格能够可靠地检测材料变化、不均匀性和缺陷。附带的软件提供各种先进的分析工具，支持在生产和研究环境中对薄膜进行系统的质量控制。
It is fully functional to measure especially high samples with non-flat surfaces like boules but also for pucks and wafers. It’s a compact device, which can measure samples up to 300 mm (12 inch).
该设备通常用于
- 技术：非接触式涡流
- 多点测绘成像
- Sampling area: 800 mm x 600 mm
- Extra large sample sizes: 10 x 10 mm² to 800 x 600 mm²
功能和优点
10 x 10 mm – 800 x 600 mm
高样本可测量
各种分析选项
直面极限
快速结果
高分辨率映射
易于使用
曲面
一台设备，多种测量参数
The EddyCus® map 8060 RMT is able to measure different measurement parameters. The resistivity correlates with sheet resistance and metal layer thickness. As long as the material is well known all of these measurement parameters can be measured precisely. The device can be calibrated to output sheet resistance or resistivity directly.
- 电阻率
- 电导率
- 板材阻力
- 金属层厚度
软件和设备控制
- Easy to use – predefined measurement recipes for operator
- High usability to analyze conductive materials in detail for expert user
- Software displays resistivity or desired derived measures
- Quick change of configuration and recipes for different measurement applications
- Line profile and histogram analysis
- Sheet resistance or resistivity distribution, line scans, single point analysis
- Various data saving and export options)
Data Table for EddyCus® map 8060 RMT
设备功能
| 测量技术 | Non-contact eddy current |
| 传感器类型 | ASU Gen2 with fast trigger board |
| Max. trigger rate | 3 kHz |
| 基板 | Boules, pucks, wafer, etc. |
| 基底面积 | 24 inch / 800 mm x 600 mm (larger upon request) |
| 边缘效应修正/排除 | 1 mm from edge |
| Max. sample high | 100 毫米 |
| 扫描间距 | 1 / 2.5 / 5 / 10 / 25 mm |
| Measurement points per time | 100 – 5,000 points per minute |
| 扫描时间 | 1 – 10 minutes per wafer |
| Carrier Lifetime (µ-PCD) | Not available |
| 设备尺寸（W/H/D） | max. 1090 mm x 670 mm x 799 mm |
| 重量 | < 150 kg |
测量能力
| 板材电阻测量 | |
|---|---|
| 板材电阻测量范围 | 0.05 mOhm/sq – 300,000 Ohm/sq |
| 金属膜（如铜）厚度测量范围 | 2 nm - 2 mm（根据板材电阻（参见我们的计算器） | 金属层厚度测量 |
|
金属厚度范围 精度取决于所选设置和金属类型/导电率（如铜、铝、银）。 导电性（例如铜、铝、银） |
低精度 1 - 10 纳米；精度 2 - 5 标准 10 - 1,000 纳米；精度 1 - 3 高 1 - 100 µm；0.5 - 3 % 精度 |
| 板材电阻测量范围 | 0.05 mOhm/sq – 300,000 Ohm/sq | 电阻率测量 |
| 电阻率测量范围 | 0.002 to 1,000 mOhm·cm | 电导率测量 |
| 电导率测量范围 | 0.01 – 65 毫秒/米 |
Modular Architecture of the EddyCus® map 8060 RMT
The EddyCus® map 8060 RMT consists of 14 Modules
Eddy Current Sensor Module
- ASU Gen2 sensor with advanced signal processing
- Fast trigger board for high-speed data acquisition
- Data rate: up to 3 kHz trigger rate
- Effective measurement rate: 150 points/second
- Non-contact, non-destructive measurement
- Suitable for conductive thin films and bulk materials
Key Benefits
- No sample preparation required
- 100% non-destructive — measure production wafers
- High repeatability < 0.1% (1σ)
- Fast data acquisition for high throughput
High-Precision Linear Motor Axes
- Linear motor axes for X, Y, and Z movement
- Maintenance-free operation (no spindles/belts)
- High dynamics for fast scan speeds
- Encoder-triggered measurement for precise positioning
| Axis | Travel Range | 准确性 |
|---|---|---|
| X-Axis | 800 mm | < ± 15 µm |
| Y-Axis | 600 mm | < ± 15 µm |
| Z-Axis | 150 毫米 | < ± 5 µm |
Key Benefits
- True position accuracy for reliable mapping
- High scan speed → higher throughput
- No mechanical wear → long lifetime
- Precise Z-control for adaptive scanning
Robust Industrial Platform
- Ready for automated wafer handling add-on (Module 12)
- Complete measurement system housing
- Integrated frame for all mechanical components
- Vibration-damped construction
- Front-loading access for easy sample handling
- Status LEDs and optional display
主要功能
- Compact footprint for lab environments
- Safety interlocks on all access doors
- Emergency stop (E-Stop) functionality
- Handler port for automation integration
Adaptive Z-Movement
Required for samples with warp > ± 200 µm
Two-Pass Measurement Principle
- Pass 1: Topography scan captures surface profile
- Pass 2: Z-axis follows surface for constant working distance
- Improves accuracy on warped samples
- Superior to software-based lift-off compensation
Key Benefits
- Best possible accuracy on warped wafers
- Measure samples with high bow/warp
- Constant working distance → consistent results
- Enable TTV measurement (with confocal, for semi-transparent samples)
Lift-off Compensation Algorithm (LOC)
Required if Module 4 (Adaptive Z) is not selected
Software-Based Distance Compensation
- Algorithm compensates for lift-off variations
- Uses eddy current signal characteristics
- Suitable for samples with warp ≤ ± 200 µm
- Single-pass measurement (faster throughput)
- Cost-effective alternative to adaptive Z
How It Works
The LOC algorithm analyzes the raw data characteristics of the eddy current signal to mathematically compensate for variations in sensor-to-sample distance during a single-pass scan.
Key Benefits
- Faster measurement (single pass)
- Lower system cost
- Good accuracy for flat samples
- No additional hardware required
Geometry and Alignment Detection
Requires Module 4 (Adaptive Z-Movement)
Automatic Wafer Orientation & Geometry Analysis
- Automatic flat and notch detection
- Precise wafer rotation angle measurement
- Sample diameter measurement
- Roundness/circularity analysis
- Alignment marker detection
Measured Parameters
| Parameter | Typical Accuracy |
|---|---|
| Rotation Angle | ≤ 0.5° |
| Flat/Notch Position | Automatic detection |
| Diameter | < 0.1 mm |
| Roundness | Deviation from ideal circle |
Key Benefits
- Automatic wafer orientation detection
- Correct data alignment to crystal orientation
- Quality control of wafer geometry
Calibration for Sheet Resistance / Bulk Resistivity
NIST-Traceable Calibration for Thick Samples
- NIST traceability / conformity certified
- For bulk materials ≥ 3× standard penetration depth (e.g., min. 3 mm @ 1 mΩ·cm)
- Global calibration for samples ≥ 125 mm diameter
- Customer-selectable measurement pitch
Edge Cut-off by Resistivity
Measurement valid from edge cut-off distance inward:
| 电阻率 | Edge Cut-off |
|---|---|
| 11 mΩ·cm | 9 mm |
| 25 mΩ·cm | 10 mm |
| 117 mΩ·cm | 12 mm |
| 1049 mΩ·cm | 18 mm |
For measurement up to the edge please order Module 9 (EEC)
Key Benefits
- Traceable, certified measurements
- Comparable results across systems
- Compliance with quality standards
Wafer Resistivity Calibration
For Thin Samples Below Standard Penetration Depth
- Calibration for samples < 3× standard penetration depth
- Multidimensional SURAGUS calibration enables
interpolation for any desired thickness - Works with known thickness or measured thickness
- For SiC wafers: thickness from confocal sensor (Module 4)
Workflow
- Specify or measure wafer thickness
- System calculates skin depth correction
- Calibration accounts for finite thickness effects
- Output: True resistivity values
KEY BENEFITS
- Accurate resistivity for thin wafers
- Combined thickness + resistivity analysis
- Automated workflow with confocal sensor
Edge Effect Compensation (EEC)
Measurement Down to 1 mm from Sample Edge
- Universal algorithm for edge correction
- Valid measurements as close as 1 mm to edge
- Global algorithm for samples ≥ 125 mm diameter
- Eliminates edge exclusion zones
- Full wafer utilization in mapping
Coverage Comparison
| With EEC | Without EEC | |
|---|---|---|
| Edge exclusion | 1 mm | 9 – 18 mm (varies) |
| Usable area of a 200 mm wafer | ~99 % | ~85 % |
| Edge defect detection | Full coverage | Limited |
Key Benefits
- Full wafer coverage
- Detect edge-related process issues
- Maximize usable wafer area
Software and User Interface
“Imaging Control” — Next-Generation Software Platform
Core Features
- Modern, intuitive user interface
- Recipe management with version control
- Real-time measurement visualization
- Comprehensive data analysis tools
- Multiple scan path options (meander, circular)
Data Management
- InfluxDB time-series database
- ASCII data export
- Automated PDF reporting
Analysis Capabilities
- 2D resistivity mapping
- Statistical analysis (mean, σ, uniformity)
- Line scan / profile extraction
- Histogram analysis
- Customizable report templates
REST API and Interfaces
Full Automation & Integration Capabilities
REST API Endpoint Groups
| Function Group | Description |
|---|---|
| System status | Device status, version, connection health |
| Recipe management | CRUD operations, parameter validation |
| Measurement control | Start, abort, progress tracking |
| Sample handling | Load/unload commands for automation |
| Results & data | Maps, timeseries, statistical results |
| 校准 | Calibration data, reference measurements |
| Reporting | PDF generation, data export |
Integration Interfaces
- Process Output Files (PO-Files) for MES
- SECS/GEM (semiconductor standard)
Key Benefits
- Full remote control capability
- Integration into existing IT/OT systems
- Automated data flow to MES/ERP
- OpenAPI/Swagger documentation
Automatic Wafer Handling Add-on
Compact Automation for High-Throughput Applications
- Extremely compact side-mounted module
- SCARA robot for precise wafer handling
- Supports 100 mm to 300 mm wafers
- Open cassette interface (standard)
- Seamless integration with M3 housing
Specifications
| Parameter | Specification |
|---|---|
| Wafer sizes | Device status, version, connection health |
| Cassette type | Open cassette |
| Throughput | Optimized for measurement time |
| Placement accuracy | < 1 mm |
Key Benefits
- Unattended cassette-to-cassette operation
- Consistent wafer placement
- Reduced operator dependency
- Higher effective throughput
Replaceable Chuck System
Quick-Change Sample Holders for Different Applications
- Tool-free chuck exchange
- Optimized for specific wafer sizes
- Non-conductive materials (PEEK, PVC, Acrylic)
- Precision alignment features
- Sample fixation for high scan speeds
Available Chuck Configurations
- Tool-free chuck exchange
- Optimized for specific wafer sizes
- Non-conductive materials (PEEK, PVC, Acrylic)
- Precision alignment features
- Sample fixation for high scan speeds
Available Chuck Configurations
| Type | Sizes / Dimensions |
|---|---|
| Wafer chuck | 100, 150, 200, 300, 350 mm |
| Panel chuck | Custom sizes up to 600 x 600 mm |
Key Benefits
- One system for multiple sample types
- Fast changeover between applications
- Optimized holding for each size
- Future-proof for new sample formats