Wafer Metallization Characterization​

Characterize aluminum metallization uniformity and sheet resistance on wafer level to optimize device performance

Challenges for Wafer Metallization Product Quality

Aluminum interconnects on silicon wafers typically show sheet resistance from 0.03 to 0.13 Ohm/sq at film thickness between 0.2 and 1 micrometer. Keeping layer thickness and uniformity within tight limits is challenging, since even small drifts directly impact product quality, compliance with minimum specifications and material consumption. At the same time, stable sheet resistance and high lateral homogeneity are required to avoid local hot spots, timing shifts and early reliability failures. Defects such as voids, hillocks or particles can turn marginal areas into open or leaky lines, which makes detailed wafer level mapping of thickness, sheet resistance and defect distribution essential for robust interconnect processes.

Atline Analysis Solution for Metallization Characterization on Wafer

EddyCus® map 2530 TM imaging devices specialized for metallization layers or the fully automated EddyCus® ResMapper

With a sheet resistance range from 0.001 to 20,000 Ohm/sq, the EddyCus® map 2530 series is ideal for the characterization of aluminum metallization on wafers.

It is also suitable for other metallizations such as

  • Copper – Cu
  • Titatnium nitride – TiN
  • Tantalum nitride – TaN
  • Nickel – Ni
  • ITO

Inline Analysis Solution for Wafer Metallization Characterization

The EddyCus® inline SLIM is part of our family of in tool metrology solutions. These systems are integrated directly into vacuum deposition chambers and generate line profiles of sheet resistance, layer thickness and resistivity immediately after coating. This provides instant feedback on process stability and product quality.

The data quality is comparable to that of conventional four point probe systems.

测量结果

安装EddyCus在线式SLIM装置快速且非侵入性。只需将现有阀盖替换为带电缆穿孔的盖子。沉积设备保持原位并维持其认证状态。

简易改造工作流程

  • 取下原装外壳 
  • 拆下阀门
  • 将传感器叉插入晶圆传输路径
  • 重新安装阀门
  • 将电缆穿过预留的开口
  • 将带电缆穿线孔的替换盖板安装至控制单元
  • 系统已准备就绪,可进行测量

典型安装时间在一小时内。

Sheet resistance map of a thin-film on a wafer. Sheet resistance value between 5 and 23 Ohm per square

结论

EddyCus® 地图 2530 TM

Semi-automated
EddyCus® map 2530 Series

涡流在线测量技术将真空沉积工艺从周期性、基于测试晶圆的流程,转变为持续性、数据驱动的自监测系统。通过为实际生产晶圆提供实时厚度反馈,该技术:

  • 缩短资格认证周期
  • 降低测量延迟
  • 最大限度地减少不确定性
  • 无需专用监测和测试晶圆

因此,晶圆厂能够实现更高的吞吐量、更低的拥有成本,并显著减少非生产性晶圆使用,同时保持甚至提升工艺稳定性和均匀性。

涡流检测与四点探针测量结果高度吻合。
点击此处查看详细对比。

EddyCus® ResMapper

Fully-automated
EddyCus® ResMapper

涡流在线测量技术将真空沉积工艺从周期性、基于测试晶圆的流程,转变为持续性、数据驱动的自监测系统。通过为实际生产晶圆提供实时厚度反馈,该技术:

  • 缩短资格认证周期
  • 降低测量延迟
  • 最大限度地减少不确定性
  • 无需专用监测和测试晶圆

因此,晶圆厂能够实现更高的吞吐量、更低的拥有成本,并显著减少非生产性晶圆使用,同时保持甚至提升工艺稳定性和均匀性。

涡流检测与四点探针测量结果高度吻合。
点击此处查看详细对比。

In-chamber inline
EddyCus® inline SLIM

涡流在线测量技术将真空沉积工艺从周期性、基于测试晶圆的流程,转变为持续性、数据驱动的自监测系统。通过为实际生产晶圆提供实时厚度反馈,该技术:

  • 缩短资格认证周期
  • 降低测量延迟
  • 最大限度地减少不确定性
  • 无需专用监测和测试晶圆

因此,晶圆厂能够实现更高的吞吐量、更低的拥有成本,并显著减少非生产性晶圆使用,同时保持甚至提升工艺稳定性和均匀性。

涡流检测与四点探针测量结果高度吻合。
点击此处查看详细对比。

索取报价

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常见问题

  • 板材阻力
  • 金属层厚度
  • 电阻率
  • 150毫米,
  • 200毫米和
  • 300毫米样品
  • 2–4英寸晶圆通过适配器
  • 片电阻线轮廓
  • 金属层厚度线轮廓
  • 电阻率剖面图