Non-contact Resistivity Mapping System
EddyCus® map 8060 RMT

High Resolution Imaging System for SiC Crystal Growth & Wafer Production

Introduction

The EddyCus® map 8060 RMT automatically measures the sheet resistance and resistivity of large samples up to 800 × 600 mm² (600 × 600 mm² as measurable area) in non-contact mode. After manual placement of the sample, the system performs a fully automated scan and generates a high-resolution sheet resistance map across the entire surface.

The tool uses a moving eddy current sensor, while the sample lays on the table. This design allows for measurements on the fly, with no physical contact required, eliminating errors due to contact resistance. Depending on the selected settings, users can prioritize fast measurement times (under 1 minute) or high spatial resolution (up to 90,000 measurement points per scan).

The non-contact measurement ensures high accuracy and repeatability, independent of surface condition or contact quality. The dense measurement grid enables reliable detection of material variations, inhomogeneities, and defects. The included software offers a wide range of advanced analysis tools, supporting systematic quality control of thin films in both manufacturing and research environments.

It is fully functional to measure especially high samples with non-flat surfaces like boules but also for pucks and wafers. It’s a compact device, which can measure samples up to 300 mm (12 inch).

The device is typically used for:

  • Technology: non-contact eddy current
  • Imaging by multipoint mapping
  • Sampling area: 800 mm x 600 mm
  • Extra large sample sizes: 10 x 10 mm² to 800 x 600 mm²

Features and Benefits

10 x 10 mm – 800 x 600 mm

High Samples Measurable

Various Analyzing Options

Measuring up to the Edge

Fast Results

High Resolution Mappings

Easy to Use

Curved Surfaces

One Device, Multiple Measurement Parameters

The EddyCus® map 8060 RMT is able to measure different measurement parameters. The resistivity correlates with sheet resistance and metal layer thickness. As long as the material is well known all of these measurement parameters can be measured precisely. The device can be calibrated to output sheet resistance or resistivity directly.

Software and Device Control

  • Easy to use – predefined measurement recipes for operator
  • High usability to analyze conductive materials in detail for expert user
  • Software displays resistivity or desired derived measures
  • Quick change of configuration and recipes for different measurement applications
  • Line profile and histogram analysis
  • Sheet resistance or resistivity distribution, line scans, single point analysis
  • Various data saving and export options)

Data Table for EddyCus® map 8060 RMT

Device Features

Measurement technology Non-contact eddy current
Sensor type ASU Gen2 with fast trigger board
Max. trigger rate 3 kHz
Substrates Boules, pucks, wafer, etc.
Substrate area 24 inch / 800 mm x 600 mm (larger upon request)
Edge effect correction / exclusion 1 mm from edge
Max. sample high 100 mm
Scanning pitch 1 / 2.5 / 5 / 10 / 25 mm
Measurement points per time 100 – 5,000 points per minute
Scanning time 1 – 10 minutes per wafer
Carrier Lifetime (µ-PCD) Not available
Device dimensions (w/h/d) max. 1090 mm x 670 mm x 799 mm
Weight < 150 kg

Measurement Capabilities

Sheet resistance measurement
Sheet resistance measurement range 0.05 mOhm/sq – 300,000 Ohm/sq
Thickness measurement range of metal films (e.g. copper) 2 nm – 2 mm (in accordance with sheet resistance (cf. our calculator))
Metal layer thickness measurement
Metal thickness range
Accuracies depend on the selected setup and the type /
conductivity of the metal (e.g. copper, aluminum, silver)
Low 1 – 10 nm; 2 – 5 % accuracy
Standard 10 – 1,000 nm; 1 – 3 % accuracy
High 1 – 100 µm; 0.5 – 3 % accuracy
Sheet resistance measurement range 0.05 mOhm/sq – 300,000 Ohm/sq
Resistivity measurement
Resistivity measurement range 0.002 to 1,000 mOhm·cm
Conductivity measurement
Conductivity measurement range 0.01 – 65 MS/m

Modular Architecture of the EddyCus® map 8060 RMT

The EddyCus® map 8060 RMT consists of 14 Modules

Eddy Current Sensor Module

  • ASU Gen2 sensor with advanced signal processing
  • Fast trigger board for high-speed data acquisition
  • Data rate: up to 3 kHz trigger rate
  • Effective measurement rate: 150 points/second
  • Non-contact, non-destructive measurement
  • Suitable for conductive thin films and bulk materials

Key Benefits

  • No sample preparation required
  • 100% non-destructive — measure production wafers
  • High repeatability < 0.1% (1σ)
  • Fast data acquisition for high throughput

High-Precision Linear Motor Axes

  • Linear motor axes for X, Y, and Z movement
  • Maintenance-free operation (no spindles/belts)
  • High dynamics for fast scan speeds
  • Encoder-triggered measurement for precise positioning
AxisTravel RangeAccuracy
X-Axis800 mm< ± 15 µm
Y-Axis600 mm< ± 15 µm
Z-Axis150 mm< ± 5 µm

Key Benefits

  • True position accuracy for reliable mapping
  • High scan speed → higher throughput
  • No mechanical wear → long lifetime
  • Precise Z-control for adaptive scanning

Robust Industrial Platform

  • Ready for automated wafer handling add-on (Module 12)
  • Complete measurement system housing
  • Integrated frame for all mechanical components
  • Vibration-damped construction
  • Front-loading access for easy sample handling
  • Status LEDs and optional display

Key Features

  • Compact footprint for lab environments
  • Safety interlocks on all access doors
  • Emergency stop (E-Stop) functionality
  • Handler port for automation integration

Adaptive Z-Movement

Required for samples with warp > ± 200 µm

Two-Pass Measurement Principle

  • Pass 1: Topography scan captures surface profile
  • Pass 2: Z-axis follows surface for constant working distance
  • Improves accuracy on warped samples
  • Superior to software-based lift-off compensation

Key Benefits

  • Best possible accuracy on warped wafers
  • Measure samples with high bow/warp
  • Constant working distance → consistent results
  • Enable TTV measurement (with confocal, for semi-transparent samples)

Lift-off Compensation Algorithm (LOC)

Required if Module 4 (Adaptive Z) is not selected

Software-Based Distance Compensation

  • Algorithm compensates for lift-off variations
  • Uses eddy current signal characteristics
  • Suitable for samples with warp ≤ ± 200 µm
  • Single-pass measurement (faster throughput)
  • Cost-effective alternative to adaptive Z

How It Works

The LOC algorithm analyzes the raw data characteristics of the eddy current signal to mathematically  compensate for variations in sensor-to-sample distance  during a single-pass scan.

Key Benefits

  • Faster measurement (single pass)
  • Lower system cost
  • Good accuracy for flat samples
  • No additional hardware required

Geometry and Alignment Detection

Requires Module 4 (Adaptive Z-Movement)

Automatic Wafer Orientation & Geometry Analysis

  • Automatic flat and notch detection
  • Precise wafer rotation angle measurement
  • Sample diameter measurement
  • Roundness/circularity analysis
  • Alignment marker detection

Measured Parameters

ParameterTypical Accuracy
Rotation Angle≤ 0.5°
Flat/Notch PositionAutomatic detection
Diameter< 0.1 mm
RoundnessDeviation from ideal circle

Key Benefits

  • Automatic wafer orientation detection
  • Correct data alignment to crystal orientation
  • Quality control of wafer geometry

Calibration for Sheet Resistance / Bulk Resistivity

NIST-Traceable Calibration for Thick Samples

  • NIST traceability / conformity certified
  • For bulk materials ≥ 3× standard penetration depth (e.g., min. 3 mm @ 1 mΩ·cm)
  • Global calibration for samples ≥ 125 mm diameter
  • Customer-selectable measurement pitch

Edge Cut-off by Resistivity

Measurement valid from edge cut-off distance inward:

ResistivityEdge Cut-off
11 mΩ·cm9 mm
25 mΩ·cm10 mm
117 mΩ·cm12 mm
1049 mΩ·cm18 mm

For measurement up to the edge please order Module 9 (EEC)

Key Benefits

  • Traceable, certified measurements
  • Comparable results across systems
  • Compliance with quality standards

Wafer Resistivity Calibration

For Thin Samples Below Standard Penetration Depth

  • Calibration for samples < 3× standard penetration depth
  • Multidimensional SURAGUS calibration enables
    interpolation for any desired thickness
  • Works with known thickness or measured thickness
  • For SiC wafers: thickness from confocal sensor (Module 4)

Workflow

  1. Specify or measure wafer thickness
  2. System calculates skin depth correction
  3. Calibration accounts for finite thickness effects
  4. Output: True resistivity values

KEY BENEFITS

  • Accurate resistivity for thin wafers
  • Combined thickness + resistivity analysis
  • Automated workflow with confocal sensor

Edge Effect Compensation (EEC)

Measurement Down to 1 mm from Sample Edge

  • Universal algorithm for edge correction
  • Valid measurements as close as 1 mm to edge
  • Global algorithm for samples ≥ 125 mm diameter
  • Eliminates edge exclusion zones
  • Full wafer utilization in mapping

Coverage Comparison

 With EECWithout EEC
Edge exclusion1 mm9 – 18 mm (varies)
Usable area of a 200 mm wafer~99 %~85 %
Edge defect detectionFull coverageLimited

Key Benefits

  • Full wafer coverage
  • Detect edge-related process issues
  • Maximize usable wafer area

Software and User Interface

“Imaging Control” — Next-Generation Software Platform

Core Features

  • Modern, intuitive user interface
  • Recipe management with version control
  • Real-time measurement visualization
  • Comprehensive data analysis tools
  • Multiple scan path options (meander, circular)

Data Management

  • InfluxDB time-series database
  • ASCII data export
  • Automated PDF reporting

Analysis Capabilities

  • 2D resistivity mapping
  • Statistical analysis (mean, σ, uniformity)
  • Line scan / profile extraction
  • Histogram analysis
  • Customizable report templates

REST API and Interfaces

Full Automation & Integration Capabilities

REST API Endpoint Groups

Function GroupDescription
System statusDevice status, version, connection health
Recipe managementCRUD operations, parameter validation
Measurement controlStart, abort, progress tracking
Sample handlingLoad/unload commands for automation
Results & dataMaps, timeseries, statistical results
CalibrationCalibration data, reference measurements
ReportingPDF generation, data export

Integration Interfaces

  • Process Output Files (PO-Files) for MES
  • SECS/GEM (semiconductor standard)

Key Benefits

  • Full remote control capability
  • Integration into existing IT/OT systems
  • Automated data flow to MES/ERP
  • OpenAPI/Swagger documentation

Automatic Wafer Handling Add-on

Compact Automation for High-Throughput Applications

  • Extremely compact side-mounted module
  • SCARA robot for precise wafer handling
  • Supports 100 mm to 300 mm wafers
  • Open cassette interface (standard)
  • Seamless integration with M3 housing

Specifications

ParameterSpecification
Wafer sizesDevice status, version, connection health
Cassette typeOpen cassette
ThroughputOptimized for measurement time
Placement accuracy< 1 mm

Key Benefits

  • Unattended cassette-to-cassette operation
  • Consistent wafer placement
  • Reduced operator dependency
  • Higher effective throughput

Replaceable Chuck System

Quick-Change Sample Holders for Different Applications

  • Tool-free chuck exchange
  • Optimized for specific wafer sizes
  • Non-conductive materials (PEEK, PVC, Acrylic)
  • Precision alignment features
  • Sample fixation for high scan speeds

Available Chuck Configurations

  • Tool-free chuck exchange
  • Optimized for specific wafer sizes
  • Non-conductive materials (PEEK, PVC, Acrylic)
  • Precision alignment features
  • Sample fixation for high scan speeds

Available Chuck Configurations

TypeSizes / Dimensions
Wafer chuck100, 150, 200, 300, 350 mm
Panel chuckCustom sizes up to 600 x 600 mm

Key Benefits

  • One system for multiple sample types
  • Fast changeover between applications
  • Optimized holding for each size
  • Future-proof for new sample formats